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RJK0601DPN-E0#T2 Datasheet

RJK0601DPN-E0#T2 Datasheet
Total Pages: 7
Size: 77.29 KB
Renesas Electronics America
This datasheet covers 1 part numbers: RJK0601DPN-E0#T2
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RJK0601DPN-E0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

110A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

141nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10000pF @ 10V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3