RHU002N06T106 Datasheet
RHU002N06T106 Datasheet
Total Pages: 4
Size: 127.64 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
RHU002N06T106
|
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 2.4Ohm @ 200mA, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package UMT3 Package / Case SC-70, SOT-323 |
