RF4C050APTR Datasheet
RF4C050APTR Datasheet
Total Pages: 12
Size: 2,413.79 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
RF4C050APTR
|
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 26mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 55nC @ 4.5V Vgs (Max) -8V Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package HUML2020L8 Package / Case 8-PowerUDFN |
