RDN050N20FU6 Datasheet
RDN050N20FU6 Datasheet
Total Pages: 5
Size: 84.23 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
RDN050N20FU6
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 720mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 18.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 292pF @ 10V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FN Package / Case TO-220-3 Full Pack |
