RCD080N25TL Datasheet
RCD080N25TL Datasheet
Total Pages: 8
Size: 622.34 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
RCD080N25TL
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 300mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta), 20W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
