QS8M12TCR Datasheet
QS8M12TCR Datasheet
Total Pages: 11
Size: 737.47 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
QS8M12TCR
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Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 42mOhm @ 4A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V Power - Max 1.5W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package TSMT8 |
