QS5U26TR Datasheet
QS5U26TR Datasheet
Total Pages: 11
Size: 875.6 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
QS5U26TR
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 200mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 325pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.25W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT5 Package / Case SOT-23-5 Thin, TSOT-23-5 |
