PSMN6R3-120ESQ Datasheet
PSMN6R3-120ESQ Datasheet
Total Pages: 12
Size: 736.06 KB
Nexperia
This datasheet covers 1 part numbers:
PSMN6R3-120ESQ
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 207.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11384pF @ 60V FET Feature - Power Dissipation (Max) 405W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
