PSMN1R6-30MLHX Datasheet
PSMN1R6-30MLHX Datasheet
Total Pages: 12
Size: 299.02 KB
Nexperia
This datasheet covers 1 part numbers:
PSMN1R6-30MLHX
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 160A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2.369nF @ 15V FET Feature - Power Dissipation (Max) 106W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK33 Package / Case SOT-1210, 8-LFPAK33 |
