PSMN1R5-25YL Datasheet
PSMN1R5-25YL Datasheet
Total Pages: 13
Size: 706.45 KB
Nexperia
This datasheet covers 1 part numbers:
PSMN1R5-25YL,115
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4830pF @ 12V FET Feature - Power Dissipation (Max) 109W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
