PN5179_D75Z Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) 5dB @ 200MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) 5dB @ 200MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) 5dB @ 200MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) 5dB @ 200MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) 5dB @ 200MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) 5dB @ 200MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) 5dB @ 200MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
