PMZB350UPE Datasheet
PMZB350UPE Datasheet
Total Pages: 14
Size: 695.84 KB
Nexperia
This datasheet covers 1 part numbers:
PMZB350UPE,315
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Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 450mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 127pF @ 10V FET Feature - Power Dissipation (Max) 360mW (Ta), 3.125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1006B-3 Package / Case 3-XFDFN |
