PMXB360ENEAZ Datasheet
PMXB360ENEAZ Datasheet
Total Pages: 14
Size: 248.08 KB
Nexperia
This datasheet covers 1 part numbers:
PMXB360ENEAZ
|
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 450mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 130pF @ 40V FET Feature - Power Dissipation (Max) 400mW (Ta), 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1010D-3 Package / Case 3-XDFN Exposed Pad |
