PMV90EN Datasheet
PMV90EN Datasheet
Total Pages: 16
Size: 1,039.95 KB
NXP
This datasheet covers 1 part numbers:
PMV90EN,215
|
Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 84mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 132pF @ 15V FET Feature - Power Dissipation (Max) 310mW (Ta), 2.09W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB (SOT23) Package / Case TO-236-3, SC-59, SOT-23-3 |
