PMV213SN Datasheet
PMV213SN Datasheet
Total Pages: 13
Size: 345.57 KB
Nexperia
This datasheet covers 1 part numbers:
PMV213SN,215
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 20V FET Feature - Power Dissipation (Max) 280mW (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
