PMT560ENEAX Datasheet
PMT560ENEAX Datasheet
Total Pages: 16
Size: 738.29 KB
Nexperia
This datasheet covers 1 part numbers:
PMT560ENEAX
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 715mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 112pF @ 50V FET Feature - Power Dissipation (Max) 750mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-73 Package / Case TO-261-4, TO-261AA |
