PMT200EPEX Datasheet
PMT200EPEX Datasheet
Total Pages: 15
Size: 286.02 KB
Nexperia
This datasheet covers 1 part numbers:
PMT200EPEX
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 70V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 167mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 822pF @ 35V FET Feature - Power Dissipation (Max) 800mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-73 Package / Case TO-261-4, TO-261AA |
