PMR670UPE Datasheet
PMR670UPE Datasheet
Total Pages: 17
Size: 463.01 KB
NXP
This datasheet covers 1 part numbers:
PMR670UPE,115
|
Manufacturer NXP USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 480mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 850mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.14nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 87pF @ 10V FET Feature - Power Dissipation (Max) 250mW (Ta), 770mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-75 Package / Case SC-75, SOT-416 |
