PMR280UN Datasheet
PMR280UN Datasheet
Total Pages: 14
Size: 339.88 KB
NXP
This datasheet covers 1 part numbers:
PMR280UN,115
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 980mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 340mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.89nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 45pF @ 20V FET Feature - Power Dissipation (Max) 530mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-75 Package / Case SC-75, SOT-416 |
