PMN55LN Datasheet
PMN55LN Datasheet
Total Pages: 13
Size: 334.13 KB
NXP
This datasheet covers 1 part numbers:
PMN55LN,135
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 65mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 13.1nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 20V FET Feature - Power Dissipation (Max) 1.75W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |
