PMN50XP Datasheet
PMN50XP Datasheet
Total Pages: 12
Size: 266.56 KB
NXP
This datasheet covers 1 part numbers:
PMN50XP,165
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 60mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 20V FET Feature - Power Dissipation (Max) 2.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |
