PMFPB6545UP Datasheet
PMFPB6545UP Datasheet
Total Pages: 19
Size: 605.6 KB
NXP
This datasheet covers 1 part numbers:
PMFPB6545UP,115
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Manufacturer NXP USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 70mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 520mW (Ta), 8.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN2020-6 Package / Case 6-UDFN Exposed Pad |
