PMCM6501VPEZ Datasheet
PMCM6501VPEZ Datasheet
Total Pages: 15
Size: 771.93 KB
Nexperia
This datasheet covers 1 part numbers:
PMCM6501VPEZ
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Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 29.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 6V FET Feature - Power Dissipation (Max) 556mW (Ta), 12.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WLCSP (1.48x.98) Package / Case 6-XFBGA, WLCSP |
