PHT2NQ10T Datasheet
PHT2NQ10T Datasheet
Total Pages: 12
Size: 269.45 KB
NXP
This datasheet covers 1 part numbers:
PHT2NQ10T,135
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 430mOhm @ 1.75A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V FET Feature - Power Dissipation (Max) 6.25W (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
