PHD9NQ20T Datasheet
PHD9NQ20T Datasheet
Total Pages: 12
Size: 764.61 KB
Nexperia
This datasheet covers 1 part numbers:
PHD9NQ20T,118
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 959pF @ 25V FET Feature - Power Dissipation (Max) 88W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
