PHD97NQ03LT Datasheet
PHD97NQ03LT Datasheet
Total Pages: 12
Size: 673.23 KB
Nexperia
This datasheet covers 1 part numbers:
PHD97NQ03LT,118
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 12V FET Feature - Power Dissipation (Max) 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
