PHD36N03LT Datasheet
PHD36N03LT Datasheet
Total Pages: 13
Size: 92.02 KB
NXP
This datasheet covers 1 part numbers:
PHD36N03LT,118
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 43.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 17mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V FET Feature - Power Dissipation (Max) 57.6W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
