PHB38N02LT Datasheet
PHB38N02LT Datasheet
Total Pages: 13
Size: 234.42 KB
NXP
This datasheet covers 1 part numbers:
PHB38N02LT,118
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 44.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 5V Rds On (Max) @ Id, Vgs 16mOhm @ 25A, 5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 5V Vgs (Max) 12V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 20V FET Feature - Power Dissipation (Max) 57.6W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
