PHB29N08T Datasheet
PHB29N08T Datasheet
Total Pages: 12
Size: 678.03 KB
Nexperia
This datasheet covers 1 part numbers:
PHB29N08T,118
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 11V Rds On (Max) @ Id, Vgs 50mOhm @ 14A, 11V Vgs(th) (Max) @ Id 5V @ 2mA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V FET Feature - Power Dissipation (Max) 88W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
