PH5525L Datasheet
PH5525L Datasheet
Total Pages: 12
Size: 99.23 KB
NXP
This datasheet covers 1 part numbers:
PH5525L,115
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 81.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 16.6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 12V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
