PBSS4350SSJ Datasheet
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Manufacturer Nexperia USA Inc. Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 2.7A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 340mV @ 270mA, 2.7A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A, 2V Power - Max 750mW Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Nexperia USA Inc. Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 2.7A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 340mV @ 270mA, 2.7A Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A, 2V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
