PBRN123ES Datasheet
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Manufacturer NXP USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 40V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 700mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer NXP USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 40V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 250mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SMT3; MPAK |
Manufacturer Nexperia USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 40V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 250mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB |
