NVR4003NT3G Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.15nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 21pF @ 5V FET Feature - Power Dissipation (Max) 690mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 (TO-236AB) Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.15nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 21pF @ 5V FET Feature - Power Dissipation (Max) 690mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.15nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 21pF @ 5V FET Feature - Power Dissipation (Max) 690mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
