Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVMYS3D3N06CLTWG Datasheet

NVMYS3D3N06CLTWG Datasheet
Total Pages: 6
Size: 195.7 KB
ON Semiconductor
This datasheet covers 1 part numbers: NVMYS3D3N06CLTWG
NVMYS3D3N06CLTWG Datasheet Page 1
NVMYS3D3N06CLTWG Datasheet Page 2
NVMYS3D3N06CLTWG Datasheet Page 3
NVMYS3D3N06CLTWG Datasheet Page 4
NVMYS3D3N06CLTWG Datasheet Page 5
NVMYS3D3N06CLTWG Datasheet Page 6
NVMYS3D3N06CLTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

26A (Ta), 133A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2880pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-LFPAK

Package / Case

SOT-1023, 4-LFPAK