NVMTS0D7N04CTXG Datasheet
![NVMTS0D7N04CTXG Datasheet Page 1](http://pneda.ltd/static/datasheets/images/115/nvmts0d7n04ctxg-0001.webp)
![NVMTS0D7N04CTXG Datasheet Page 2](http://pneda.ltd/static/datasheets/images/115/nvmts0d7n04ctxg-0002.webp)
![NVMTS0D7N04CTXG Datasheet Page 3](http://pneda.ltd/static/datasheets/images/115/nvmts0d7n04ctxg-0003.webp)
![NVMTS0D7N04CTXG Datasheet Page 4](http://pneda.ltd/static/datasheets/images/115/nvmts0d7n04ctxg-0004.webp)
![NVMTS0D7N04CTXG Datasheet Page 5](http://pneda.ltd/static/datasheets/images/115/nvmts0d7n04ctxg-0005.webp)
![NVMTS0D7N04CTXG Datasheet Page 6](http://pneda.ltd/static/datasheets/images/115/nvmts0d7n04ctxg-0006.webp)
![NVMTS0D7N04CTXG Datasheet Page 7](http://pneda.ltd/static/datasheets/images/115/nvmts0d7n04ctxg-0007.webp)
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 51A (Ta), 430A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 0.67mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9281pF @ 25V FET Feature - Power Dissipation (Max) 3.9W (Ta), 273W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFNW (8.3x8.4) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package 8-DFNW (8.3x8.4) Package / Case 8-PowerTDFN |