NVJS4151PT1G Datasheet
NVJS4151PT1G Datasheet
Total Pages: 5
Size: 128.21 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NVJS4151PT1G
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 67mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V FET Feature - Power Dissipation (Max) 1.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-88/SC70-6/SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363 |
