NVATS68301PZT4G Datasheet
NVATS68301PZT4G Datasheet
Total Pages: 6
Size: 460.28 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NVATS68301PZT4G
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 31A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 75mOhm @ 14A, 10V Vgs(th) (Max) @ Id 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 20V FET Feature - Power Dissipation (Max) 84W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
