NVATS4A102PZT4G Datasheet
NVATS4A102PZT4G Datasheet
Total Pages: 6
Size: 426.95 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NVATS4A102PZT4G
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 44A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 18.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 10V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package ATPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
