NTTS2P02R2G Datasheet
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 90mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 16V FET Feature - Power Dissipation (Max) 780mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Micro8™ Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 90mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 16V FET Feature - Power Dissipation (Max) 780mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Micro8™ Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
