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NTS4173PT1G Datasheet

NTS4173PT1G Datasheet
Total Pages: 6
Size: 120.91 KB
ON Semiconductor
This datasheet covers 1 part numbers: NTS4173PT1G
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NTS4173PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

150mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.1nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

430pF @ 15V

FET Feature

-

Power Dissipation (Max)

290mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-3 (SOT323)

Package / Case

SC-70, SOT-323