NTMS5P02R2SG Datasheet
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 16V FET Feature - Power Dissipation (Max) 790mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 16V FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 16V FET Feature - Power Dissipation (Max) 790mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
