NTMS4101PR2 Datasheet
NTMS4101PR2 Datasheet
Total Pages: 5
Size: 166.04 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NTMS4101PR2
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 19mOhm @ 6.9A, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 10V FET Feature - Power Dissipation (Max) 1.38W (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
