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NTMKE4892NT1G Datasheet

NTMKE4892NT1G Datasheet
Total Pages: 5
Size: 119.17 KB
ON Semiconductor
This datasheet covers 1 part numbers: NTMKE4892NT1G
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NTMKE4892NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

26A (Ta), 148A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4270pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-ICEPAK - E1 PAD (6.3x4.9)

Package / Case

5-ICEPAK