NTMKE4891NT1G Datasheet
NTMKE4891NT1G Datasheet
Total Pages: 5
Size: 118.91 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NTMKE4891NT1G
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 26.7A (Ta), 151A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.6mOhm @ 29A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 15V FET Feature - Power Dissipation (Max) 2.8W (Ta), 89W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-ICEPAK - E1 PAD (6.3x4.9) Package / Case 5-ICEPAK |
