NTMFS4H01NT1G Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 54A (Ta), 334A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5693pF @ 12V FET Feature - Power Dissipation (Max) 3.2W (Ta), 125W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 54A (Ta), 334A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5693pF @ 12V FET Feature - Power Dissipation (Max) 3.2W (Ta), 125W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
