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NTMD6N02R2 Datasheet

NTMD6N02R2 Datasheet
Total Pages: 6
Size: 131.88 KB
ON Semiconductor
This datasheet covers 2 part numbers: NTMD6N02R2, NTMD6N02R2G
NTMD6N02R2 Datasheet Page 1
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NTMD6N02R2 Datasheet Page 6
NTMD6N02R2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.92A

Rds On (Max) @ Id, Vgs

35mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 16V

Power - Max

730mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

NTMD6N02R2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.92A

Rds On (Max) @ Id, Vgs

35mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 16V

Power - Max

730mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC