NTMD6601NR2G Datasheet
NTMD6601NR2G Datasheet
Total Pages: 6
Size: 95.07 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NTMD6601NR2G
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Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 1.1A Rds On (Max) @ Id, Vgs 215mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V Power - Max 600mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
