NTD3808NT4G Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 12V FET Feature - Power Dissipation (Max) 1.3W (Ta), 52W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 12V FET Feature - Power Dissipation (Max) 1.3W (Ta), 52W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Stub Leads, IPak |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 12V FET Feature - Power Dissipation (Max) 1.3W (Ta), 52W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
