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NTB082N65S3F Datasheet

NTB082N65S3F Datasheet
Total Pages: 10
Size: 343.23 KB
ON Semiconductor
This datasheet covers 1 part numbers: NTB082N65S3F
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NTB082N65S3F

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3410pF @ 400V

FET Feature

-

Power Dissipation (Max)

313W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB