NSVBSS63LT1G Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 25mA, 1V Power - Max 225mW Frequency - Transition 95MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 25mA, 1V Power - Max 225mW Frequency - Transition 95MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
